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| N-CHANNEL 700V - 0.58 - 10.6A TO-247 Zener-Protected PowerMESHTMIII MOSFET TYPE STW10NC70Z s s STW10NC70Z VDSS 700 V RDS(on) < 0.75 ID 10.6 A s s s TYPICAL RDS(on) = 0.58 EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15K) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 700 700 25 10.6 6.7 42 190 1.51 50 4 3 -65 to 150 150 Unit V V V A A A W W/C mA KV V/ns C C (*)Pulse width limited by safe operating area (1)ISD 10.6A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX. (*)Limited only by maximum temperature allowed Sep 2000 1/8 STW10NC70Z THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.66 30 0.1 300 C/W C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 10.6 380 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS BVDSS/TJ IDSS IGSS Parameter Drain-source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 700 0.8 1 50 10 Typ. Max. Unit V V/C A A A ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.3 A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 0.58 Max. 5 0.75 Unit V 10.6 A DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =5.3A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 13 3550 250 30 Max. Unit S pF pF pF 2/8 STW10NC70Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 350V, ID = 5.3A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 10.6 A, VGS = 10V Min. Typ. 36 12 72 19 24 100 Max. Unit ns ns nC nC nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 560V, ID = 10.6 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 36 36 77 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10.6 A, VGS = 0 ISD = 10.6 A, di/dt = 100A/s, VDD = 50V, Tj = 150C (see test circuit, Figure 5) 660 8.7 26 Test Conditions Min. Typ. Max. 10.6 42 1.6 Unit A A V ns C A GATE-SOURCE ZENER DIODE Symbol BVGSO T Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs= 1mA (Open Drain) T=25C Note(3) IGS = 50 mA Min. 25 1.3 90 Typ. Max. Unit V 10-4/C Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. VBV = T (25-T) BVGSO(25) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW10NC70Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 STW10NC70Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW10NC70Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW10NC70Z TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 7/8 STW10NC70Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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